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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3235 DESCRIPTION *With TO-3 package *Excellent safe operating area *Low collector saturation voltage APPLICATIONS *Designed for general-purpose switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 65 55 7 15 7 115 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N3235 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 55 V VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO Collector-emitter saturation voltage IC=4A ;IB=0.4A IC=10A ;IB=3.3A 1.1 V Collector-emitter saturation voltage 3.0 V Base-emitter on voltage IC=5A ; VCE=5V 1.5 V Collector cut-off current VCE=30V; IB=0 0.7 mA ICBO Collector cut-off current VCB=65V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 hFE-2 DC current gain IC=5A ; VCE=5V IC=10A ; VCE=5V 20 70 DC current gain 5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3235 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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